A V-Band Doherty Power Amplifier Based on Voltage Combination and Balance Compensation Marchand Balun
نویسندگان
چکیده
منابع مشابه
Modified Doherty Power Amplifier for Wider Band
Wireless communication system are developing rapidly, due to which new standards like WIMAX and 4G Long Term Evaluating(LTE) with a purpose of achieving high data rate result in high end applications such as high speed internet, video conferences and broadband width. These applications require mobile base stations at the transmitter as well as at receiver (T/R) to support features like multiple...
متن کاملHigh-Power Inverted Doherty Power Amplifier for Broadband Application
Abstract This paper presents a high-power inverted Doherty power amplifier for broader operational bandwidth. After analyzing two operation modes according to the load modulation of the Doherty power amplifier, the inverted Doherty structure was selected. In the design, the load impedances for optimum broadband characteristics at both the back-off and peak power levels. The Doherty power amplif...
متن کاملDesign of a Concurrent Dual-Band 1.8–2.4-GHz GaN-HEMT Doherty Power Amplifier
In this paper, the design, implementation, and experimental results of a high-efciency dual-band GaN-HEMT Doherty power amplier (DPA) are presented. An extensive discussion about the design of the passive structures is presented showing different possible topologies of the dual-band DPA. One of the proposed topologies is used to design a dual-band DPA in hybrid technology for the frequency ba...
متن کاملA Class E Power Amplifier with Low Voltage Stress
A new output structure for class E power amplifier (PA) is proposed in this paper. A series LC resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. This resonator causes low impedance at the second harmonic. The output circuit is designed to shape the switch voltage of the class E amplifier and lower the voltage stress of the transistor. T...
متن کاملA Symmetrical Optimized Doherty Power Amplifier for LTE Band41
A symmetric Power Amplifier with an optimized impedance quarter wave transmission line is presented using a thermally enhanced high Power LDMOS FET i.e. a 140W Infineon PTFC261402 device. This implementation is realized in the operating frequency of LTE Band41 (2.496GHz-2.69GHz) applicable for LTE base stations. This design achieves a high efficiency that persists for an output power back off r...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Access
سال: 2018
ISSN: 2169-3536
DOI: 10.1109/access.2018.2795379